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AFT18S230Sr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 50 watt rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 mhz. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1800 ma, p out = 50 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 1805 mhz 18.9 32.0 7.2 --35.0 -- 1 9 1840 mhz 19.1 32.0 7.1 --35.0 -- 1 8 1880 mhz 19.0 32.0 6.8 --34.0 -- 1 1 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units, 44 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 12. document number: AFT18S230S rev. 1, 11/2012 freescale semiconductor technical data 1805--1880 mhz, 50 w avg., 28 v AFT18S230Sr3 figure 1. pin connections ni--780s--6 (top view) rf in /v gs vbw n.c. vbw 16 34 25 n.c. rf out /v ds ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT18S230Sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 253 1.7 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 50 w cw, 28 vdc, i dq = 1800 ma, 1840 mhz case temperature 92 ? c, 160 w cw (4) ,28vdc,i dq = 1800 ma, 1840 mhz r ? jc 0.41 0.31 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 291 ? adc) v gs(th) 1.5 2.0 2.5 vdc gate quiescent voltage (v dd =28vdc,i d = 1800 madc, measured in functional test) v gs(q) 2.3 2.8 3.3 vdc drain--source on--voltage (v gs =10vdc,i d =2.9adc) v ds(on) 0.1 0.24 0.3 vdc functional tests (5) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1800 ma, p out = 50 w avg., f = 1880 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 18.0 19.0 21.0 db drain efficiency ? d 30.5 32.0 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.4 6.8 ? db adjacent channel power ratio acpr ? --34.0 --32.0 dbc input return loss irl ? -- 1 1 -- 7 db 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. part internally matched both on input and output. (continued)
AFT18S230Sr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit load mismatch (in freescale test fixture, 50 ohm system) i dq = 1800 ma, f = 1840 mhz vswr 10:1 at 32 vdc, 257 w cw (1) output power (3 db input overdrive from 230 w cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1800 ma, 1805--1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 207 ? w am/pm (maximum value measured at the p3db compression point across the 1805--1880 mhz bandwidth) ? ? 7.6 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 75 mhz bandwidth @ p out =50wavg. g f ? 0.35 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.01 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (1) ? p1db ? 0.37 ? db/ ? c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. AFT18S230Sr3 figure 2. AFT18S230Sr3 test circuit component layout AFT18S230S rev. 0 cut out area r1 c11 c21 c3 c4 r2 c22 c12 c1 c23 c2 c20 c19 c13 c14 c15 c16 c17 c18 c8 c7 c5 c6 c10 c9 c24 table 5. AFT18S230Sr3 test circuit component designations and values part description part number manufacturer c1, c21, c22, c23 27 pf chip capacitors atc600f270jt250xt atc c2 1.2 pf chip capacitor atc100b1r2bt500xt atc c3, c4 1.0 pf chip capacitors atc100b1r0bt500xt atc c5, c6, c7, c8 27 pf chip capacitors atc100b270jt500xt atc c9, c24 39 pf chip capacitors atc600f390jt250xt atc c10 1.5 pf chip capacitor atc100b1r5bt500xt atc c11, c12, c13, c14, c15, c16, c17, c18 10 ? f, 100 v chip capacitors c5750x7s2a106m tdk c19, c20 330 ? f, 63 v electrolytic capacitors mcrh63v337m13x21-rh multicomp r1, r2 4.75 ? , 1/4 w chip resistors crcw12064r75fnea vishay pcb 0.020 ? , ? r =3.5 ro4350 rogers
AFT18S230Sr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 1760 g ps acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. -- 2 0 -- 4 -- 8 -- 1 2 -- 1 6 18 20 19.8 19.6 -- 3 6 35 34 33 32 -- 3 1 -- 3 2 -- 3 3 -- 3 4 ? d , drain efficiency (%) ? d g ps , power gain (db) 19.4 19.2 19 18.8 18.6 18.4 18.2 1780 1800 1820 1840 1860 1880 1900 1920 31 -- 3 5 -- 2 4 acpr (dbc) parc v dd =28vdc,p out =50w(avg.),i dq = 1800 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 160 w (pep), i dq = 1800 ma two--tone measurements, (f1 + f2)/2 = center frequency of 1840 mhz figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 -- 5 25 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 40 55 85 10 40 35 30 25 20 15 ? d ? drain efficiency (%) -- 3 d b = 4 5 w 70 ? d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 21 g ps , power gain (db) 20.5 20 19.5 19 18.5 18 g ps single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,i dq = 1800 ma, f = 1840 mhz -- 1 d b = 2 0 w -- 2 d b = 3 5 w irl parc (db) -- 3 . 8 -- 3 -- 3 . 2 -- 3 . 4 -- 3 . 6 -- 4 -- 6
6 rf device data freescale semiconductor, inc. AFT18S230Sr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 15 21 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 20 19 10 100 300 10 -- 6 0 acpr (dbc) 18 17 16 0 -- 3 0 -- 4 0 -- 5 0 1805 mhz figure 7. broadband frequency response 11 23 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1800 ma 19 17 15 gain (db) 21 13 1500 1600 1700 1800 1900 2000 2100 2200 2300 -- 3 0 30 20 10 0 -- 1 0 irl (db) -- 2 0 gain irl 1840 mhz 1880 mhz 1880 mhz 1840 mhz 1805 mhz 1805 mhz 1840 mhz 1880 mhz v dd =28vdc,i dq = 1800 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf
AFT18S230Sr3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1800 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) z load (1) ( ? ) max linear gain (db) max output power p1db p3db (dbm) (w) ? d (%) am/pm ( ? ) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.80 - j3.40 1.00 + j3.41 1.09 - j2.10 18.5 54.2 263 57.8 -10 55.1 324 59.9 -16 1840 1.10 - j3.70 1.30 + j3.80 1.20 - j2.30 18.5 54.2 263 57.1 -9 55.2 331 61.1 -16 1880 1.40 - j4.10 1.70 + j4.13 1.11 - j2.30 18.7 54.2 263 57.9 -10 55.0 316 59.5 -16 (1) load impedance for optimum p1db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit figure 8. load pull performance ? maximum p1db tuning v dd =28vdc,i dq = 1800 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) z load (1) ( ? ) max linear gain (db) max drain efficiency p1db p3db (dbm) (w) ? d (%) am/pm ( ? ) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.80 - j3.40 1.00 + j3.50 1.90 - j0.50 21.7 51.5 141 70.0 -17 53.2 209 71.9 -22 1840 1.10 - j3.70 1.30 + j3.83 1.90 - j0.90 21.4 51.9 155 70.1 -15 52.9 195 72.8 -24 1880 1.40 - j4.10 1.80 + j4.30 1.50 - j1.10 21.3 52.2 166 69.9 -17 52.8 191 71.2 -25 (1) load impedance for optimum p1db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit figure 9. load pull performance ? maximum drain efficiency tuning
8 rf device data freescale semiconductor, inc. AFT18S230Sr3 p1db -- typical load pull contours ? 1840 mhz -- 3 0 -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 -- 2 p e -- 3 0 -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 -- 2 p e 22 22.5 21 18.5 note: = maximum output power = maximum drain efficiency p e figure 10. p1db load pull output power contours (dbm) -- 3 0 real ( ? ) -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 figure 11. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) figure 12. p1db load pull gain contours (db) real ( ? ) imaginary ( ? ) figure 13. p1db load pull am/pm contours ( ? ) real ( ? ) imaginary ( ? ) power gain drain efficiency acpr parc -- 2 p e 50.5 51 50 51.5 52 53 53.5 54 52.5 52.5 -- 3 0 -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 -- 2 p e 66 62 54 64 68 70 62 60 58 56 56 21.5 20.5 20 19.5 19 -- 2 6 -- 2 2 -- 2 0 -- 1 8 -- 2 4 -- 1 6 -- 1 4 -- 1 2 -- 1 0
AFT18S230Sr3 9 rf device data freescale semiconductor, inc. p3db -- typical load pull contours ? 1840 mhz -- 3 0 -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 -- 2 -- 3 0 -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 -- 2 note: = maximum output power = maximum drain efficiency p e figure 14. p3db load pull output power contours (dbm) -- 3 0 real ( ? ) -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 figure 15. p3db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) figure 16. p3db load pull gain contours (db) real ( ? ) imaginary ( ? ) figure 17. p3db load pull am/pm contours ( ? ) real ( ? ) imaginary ( ? ) power gain drain efficiency acpr parc -- 2 p 51 51.5 53.5 -- 3 0 -- 1 -- 1 . 5 -- 2 . 5 imaginary ( ? ) -- 0 . 5 1 1.5 2 2.5 0.5 3 -- 2 52 52.5 53 54 54.5 e 70 p e 68 66 64 62 60 58 56 54 p 20.5 20 19.5 e 19 18.5 18 17.5 17 16.5 p -- 3 0 -- 2 2 e -- 2 8 -- 2 6 -- 2 4 -- 2 0 -- 1 8 -- 1 6 -- 1 4 55
10 rf device data freescale semiconductor, inc. AFT18S230Sr3 package dimensions
AFT18S230Sr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. AFT18S230Sr3 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 44 mm tape width, 13 inch reel. the r5 tape and reel option for AFT18S230S part will be ava ilable for 2 years after release of AFT18S230S. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased this device in the r5 tape and reel option will be offered AFT18S230S in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2012 ? initial release of data sheet 1 nov. 2012 ? corrected tape and reel tape width from 32 mm to 44 mm, p. 1, 12
AFT18S230Sr3 13 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT18S230S rev. 1, 11/2012

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